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Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes

Identifieur interne : 000324 ( Main/Repository ); précédent : 000323; suivant : 000325

Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes

Auteurs : RBID : Pascal:13-0183956

Descripteurs français

Pascal (Inist)
- Stabilité thermique, Semimétal, Barrière Schottky, Tirage par contact, Recuit, Caractéristique courant tension, Caractéristique capacité tension, Hauteur barrière, Graphite, Phosphure d'indium, Nitrure de gallium, InP, GaN.

English descriptors

KwdEn :
- Annealing, Barrier height, CV characteristic, Contact printing, Gallium nitride, Graphite, IV characteristic, Indium phosphide, Schottky barriers, Semimetals, Thermal stability.

Abstract

The electrical properties of highly rectifying semimetal-graphite Schottky contacts fabricated by printing colloid graphite on n-type InP and GaN are investigated as a function of annealing temperature by current-voltage and capacitance-voltage techniques. As-deposited Schottky diodes exhibit excellent current-voltage rectifying characteristics of 7.5 x 10⁷ and 1.9 x 10¹¹ with Schottky barrier height of 1.13 and 1.29 eV at room temperature for InP and GaN, respectively. The key aspect of this technique, compared with conventional vacuum evaporation, is low deposition energy process, leaving the surface undisturbed.

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Pascal:13-0183956

Le document en format XML

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<author><name sortKey="Yatskiv, R" uniqKey="Yatskiv R">R. Yatskiv</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Photonics and Electronics, Academy of Sciences CR, v.v.i., Chaberska 57</s1>
<s2>18251, Prague</s2>
<s3>CZE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>République tchèque</country>
<wicri:noRegion>18251, Prague</wicri:noRegion>
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<author><name sortKey="Grym, J" uniqKey="Grym J">J. Grym</name>
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<sZ>2 aut.</sZ>
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<date when="2013">2013</date>
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<term>Barrier height</term>
<term>CV characteristic</term>
<term>Contact printing</term>
<term>Gallium nitride</term>
<term>Graphite</term>
<term>IV characteristic</term>
<term>Indium phosphide</term>
<term>Schottky barriers</term>
<term>Semimetals</term>
<term>Thermal stability</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Stabilité thermique</term>
<term>Semimétal</term>
<term>Barrière Schottky</term>
<term>Tirage par contact</term>
<term>Recuit</term>
<term>Caractéristique courant tension</term>
<term>Caractéristique capacité tension</term>
<term>Hauteur barrière</term>
<term>Graphite</term>
<term>Phosphure d'indium</term>
<term>Nitrure de gallium</term>
<term>InP</term>
<term>GaN</term>
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<front><div type="abstract" xml:lang="en">The electrical properties of highly rectifying semimetal-graphite Schottky contacts fabricated by printing colloid graphite on n-type InP and GaN are investigated as a function of annealing temperature by current-voltage and capacitance-voltage techniques. As-deposited Schottky diodes exhibit excellent current-voltage rectifying characteristics of 7.5 x 10<sup>7</sup>
 and 1.9 x 10<sup>11</sup>
 with Schottky barrier height of 1.13 and 1.29 eV at room temperature for InP and GaN, respectively. The key aspect of this technique, compared with conventional vacuum evaporation, is low deposition energy process, leaving the surface undisturbed.</div>
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<fC01 i1="01" l="ENG"><s0>The electrical properties of highly rectifying semimetal-graphite Schottky contacts fabricated by printing colloid graphite on n-type InP and GaN are investigated as a function of annealing temperature by current-voltage and capacitance-voltage techniques. As-deposited Schottky diodes exhibit excellent current-voltage rectifying characteristics of 7.5 x 10<sup>7</sup>
 and 1.9 x 10<sup>11</sup>
 with Schottky barrier height of 1.13 and 1.29 eV at room temperature for InP and GaN, respectively. The key aspect of this technique, compared with conventional vacuum evaporation, is low deposition energy process, leaving the surface undisturbed.</s0>
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Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes

Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri